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PD54003STR-E View Datasheet(PDF) - STMicroelectronics
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Description
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PD54003STR-E
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
STMicroelectronics
PD54003STR-E Datasheet PDF : 28 Pages
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PD54003-E, PD54003S-E
1
Electrical data
1.1
Maximum ratings
Table 1. Absolute maximum ratings
(T
CASE
= 25°C)
Symbol
Parameter
V
(BR)DSS
V
GS
I
D
P
DISS
T
J
T
STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
C
= 70
°
C)
Max. operating junction temperature
Storage temperature
1.2
Thermal data
Table 2. Thermal data
Symbol
Parameter
R
thJC
Junction - case thermal resistance
Electrical data
Value
Unit
25
V
±
20
V
4
A
52.8
W
165
°
C
-65 to +150
°
C
Value
1.8
Unit
°
C/W
3/28
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