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RFP2P10 View Datasheet(PDF) - Intersil

Part Name
Description
View to exact match
RFP2P10 Datasheet PDF : 5 Pages
1 2 3 4 5
RFP2P08, RFP2P10
RFP2P08
RFP2P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
-80
-80
2
5
±20
25
0.2
-55 to 150
300
260
-100
-100
2
5
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/oCaaa
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = -250µA, VGS = 0
RFP2P08
-80
RFP2P10
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
-100
VGS = VDS, ID = -250µA
-2
VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -
VGS = ±20V, VDS = 0V
-
ID = -2A, VGS = -10V (Figures 6, 7)
-
ID = -2A, VGS = -10V
-
ID = 1A, VDD = -50V, RG = 50, VGS = -10V,
-
RL = 46.5
(Figures 10, 11, 12)
-
-
-
VGS = 0V, VDS = -25V, f =1MHz
-
(Figure 9)
-
-
-
TYP MAX UNITS
-
-
V
-
-
V
-
-4
V
-
-1
µA
-
-25
µA
- ±100 nA
- 3.500
-
-7.0
V
7
25
ns
15
45
ns
14
45
ns
11
25
ns
-
150
pF
-
80
pF
-
30
pF
-
5
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -1A
Diode Reverse Recovery Time
trr
ISD = -2A, dISD/dt = 50A/µs
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
-1.4
V
-
135
-
ns
2
 

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