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P4SMAJ6 View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
P4SMAJ6 Datasheet PDF : 2 Pages
1 2
Product specification
P4SMAJ6.0A
Features
For surface mounted applications in order to optimize board space.
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Low inductance
DO-214AC(SMA)
1.575
1.397
2
4.597
3.988
2.896 1.67
1
2.489 1.47
Unit: mm
3.93
3.73
5.283
4.775
2.438
1.981
2.38
2.18
5.49
5.29
Recommended
Land Pattern
1.524
0.762
0.203
0.051
0.305
0.152
Absolute Maximum Ratings Ta = 25
Parameter
Peak Power Dissipation at TA=25, TP=1ms (Note 1,2,5)
Steady State Power Dissipation (Note 3)
Peak Forward Surge Current
(Note 4)
Peak Pulse Current Current on 10/1000μs waveform (Note 1,2,5)
Operating and Storage Temperature Range
Symbol
PPPM
PM(AV)
IFSM
IPPM
Tj, TSTG
Ratings
Minimum 400
1
40
See Table
-55 to +150
Units
W
W
A
A
Electrical Characteristics Ta = 25
Reverse
Stand-off Voltage
Breakdown
Voltage
Test
Reverse Leakage
Current
Part Number
P4SMAJ6.0A
VRWM
V
6.0
VBR @ I T
IT
Min.
Max.
V
V
mA
6.67
7.67
10
I R @ VRWM
μA
800
NOTES:
1. Non-repetitive current pulse and derated above TA = 25
2. Mounted on 5.0mm2 copper pad to each terminal.
3. lead temperature at 75.
4. 8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
5. Peak pluse power waveformis 10/1000μS.
Max.
Clamp
Voltage
VC @ IPP
V
10.3
Marking
Marking
HG
Peak
Pulse
Current
I PP
A
38.8
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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