Philips Semiconductors
NPN switching transistors
Product specification
2N2222; 2N2222A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICBO
IEBO
hFE
hFE
hFE
VCEsat
VCEsat
VBEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
2N2222
IE = 0; VCB = 50 V
IE = 0; VCB = 50 V; Tamb = 150 °C
collector cut-off current
2N2222A
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tamb = 150 °C
emitter cut-off current
DC current gain
IC = 0; VEB = 3 V
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
DC current gain
2N2222A
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 1 V; note 1
IC = 150 mA; VCE = 10 V; note 1
IC = 10 mA; VCE = 10 V; Tamb = −55 °C
DC current gain
2N2222
IC = 500 mA; VCE = 10 V; note 1
2N2222A
collector-emitter saturation voltage
2N2222
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
collector-emitter saturation voltage
2N2222A
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
2N2222
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
2N2222A
collector capacitance
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
2N2222A
IC = ic = 0; VEB = 500 mV; f = 1 MHz
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222
2N2222A
noise figure
2N2222A
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN. MAX. UNIT
−
10
nA
−
10
μA
−
10
nA
−
10
μA
−
10
nA
35
−
50
−
75
−
50
−
100 300
35
−
30
−
40
−
−
400 mV
−
1.6 V
−
300 mV
−
1
V
−
1.3 V
−
2.6 V
0.6 1.2 V
−
2
V
−
8
pF
−
25
pF
250 −
300 −
MHz
MHz
−
4
dB
1997 May 29
4
77