OP495GP View Datasheet(PDF) - Analog Devices
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OP495GP Datasheet PDF : 12 Pages
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OP295/OP495–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = +5.0 V, VCM = +2.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
Output Current
POWER SUPPLY
Power Supply Rejection Ratio
VOS
IB
IOS
VCM
CMRR
AVO
∆VOS/∆T
VOH
VOL
IOUT
PSRR
Supply Current Per Amplifier
ISY
DYNAMIC PERFORMANCE
Skew Rate
Gain Bandwidth Product
Phase Margin
SR
GBP
θO
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
Specifications subject to change without notice.
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C
RL = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V
RL = 10 kΩ, –40°C ≤ TA ≤ +125°C
RL = 100 kΩ to GND
RL = 10 kΩ to GND
IOUT = 1 mA, –40°C ≤ TA ≤ +125°C
RL = 100 kΩ to GND
RL = 10 kΩ to GND
IOUT = 1 mA, –40°C ≤ TA ≤ +125°C
± 1.5 V ≤ VS ≤ ± 15 V
± 1.5 V ≤ VS ≤ ± 15 V,
–40°C ≤ TA ≤ +125°C
VOUT = 2.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C
RL = 10 kΩ
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
0
90
1000
500
30
300
800
8
20
30
±1
±3
±5
+4.0
110
10,000
1
5
4.98 5.0
4.90 4.94
4.7
0.7
2
0.7
2
90
± 11 ± 18
90
110
85
150
0.03
75
86
1.5
51
<0.1
ELECTRICAL CHARACTERISTICS (@ VS = +3.0 V, VCM = +1.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Voltage Gain
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High
Output Voltage Swing Low
POWER SUPPLY
Power Supply Rejection Ratio
VOS
IB
IOS
VCM
CMRR
AVO
∆VOS/∆T
VOH
VOL
PSRR
Supply Current Per Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
ISY
SR
GBP
θO
en p-p
en
in
0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C
RL = 10 kΩ
RL = 10 kΩ to GND
RL = 10 kΩ to GND
± 1.5 V ≤ VS ≤ ± 15 V
± 1.5 V ≤ VS ≤ ± 15 V,
–40°C ≤ TA ≤ +125°C
VOUT = 1.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C
RL = 10 kΩ
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
30
500
8
20
±1
±3
0
+2.0
90
110
750
1
2.9
0.7
2
90
110
85
150
0.03
75
85
1.6
53
<0.1
Specifications subject to change without notice.
Units
µV
µV
nA
nA
nA
nA
V
dB
V/mV
V/mV
µV/°C
V
V
V
mV
mV
mV
mA
dB
dB
µA
V/µs
kHz
Degrees
µV p-p
nV/√Hz
pA/√Hz
Units
µV
nA
nA
V
dB
V/mV
µV/°C
V
mV
dB
dB
µA
V/µs
kHz
Degrees
µV p-p
nV/√Hz
pA/√Hz
–2–
REV. B
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