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OP491 View Datasheet(PDF) - Analog Devices

Part Name
Description
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OP491 Datasheet PDF : 20 Pages
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OP191/OP291/OP491
WAFER TEST LIMITS (@ VS = +3.0 V, VCM = 0.1 V, TA = +25°C unless otherwise noted)
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage High
Output Voltage Low
Supply Current/Amplifier
VOS
IB
IOS
VCM
CMRR
PSRR
AVO
VOH
VOL
ISY
VCM = 0 V to +2.9 V
V = 2.7 V to +12 V
RL = 10 k
RL = 2 kto GND
RL = 2 kto V+
VO = 0 V, RL =
± 300
50
8
V– to V+
70
80
50
2.8
75
350
µV max
nA max
nA
V min
dB min
dB min
V/mV min
V min
mV max
µA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .GND to VS + 10 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP191/OP291/OP491G . . . . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
Package Type
θJA2
8-Pin Plastic DIP (P)
103
8-Pin SOIC (S)
158
14-Pin Plastic DIP (P)
76
14-Pin SOIC (S)
120
14-Pin TSSOP (RU)
180
θJC
Units
43
°C/W
43
°C/W
33
°C/W
36
°C/W
35
°C/W
ORDERING GUIDE
Model
Temperature
Range
Package
Description
Package
Option
OP191GP
OP191GS
OP191GBC
OP291GP
OP291GS
OP291GBC
OP491GP
OP491GS
OP491HRU
OP491GBC
–40°C to +125°C
–40°C to +125°C
+25°C
–40°C to +125°C
–40°C to +125°C
+25°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
+25°C
8-Pin Plastic DIP N-8
8-Pin SOIC
SO-8
DICE
8-Pin Plastic DIP N-8
8-Pin SOIC
SO-8
DICE
14-Pin Plastic DIP N-14
14-Pin SOIC
SO-14
14-Pin TSSOP RU-14
DICE
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2θJA is specified for the worst case conditions; i.e., θJA is specified for device in socket
for P-DIP packages; θJA is specified for device soldered in circuit board for TSSOP
and SOIC packages.
DICE CHARACTERISTICS
2
1
14 13
3
12
1
8
7
7
4
11
2
2
6
6
3
4
OP191 Die Size 0.047 × 0.066 Inch,
3,102 Sq. Mils. Substrate (Die Back-
side) Is Connected to V+.
Transistor Count, 74.
REV. 0
3
5
4
OP291 Die Size 0.070 × 0.070 Inch,
4,900 Sq. Mils. Substrate (Die Back-
side) Is Connected to V+.
Transistor Count, 146
–5–
5
10
6
7
8
9
OP491 Die Size 0.070 × 0.110 Inch,
7,700 Sq. Mils. Substrate (Die Back-
side) Is Connected to V+.
Transistor Count, 290.
 

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