NTE5408 View Datasheet(PDF) - NTE Electronics

Part Name

Description

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NTE5408

Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Peak Off–State Current

Maximum On–State Voltage

DC Holding Current

DC Gate–Trigger Current

DC Gate–Trigger Voltage

Gate Controlled Turn–On Time

I2t for Fusing Reference

IRRM

IDRXM

VTM

IHOLD

IGT

VGT

tgt

I2t

VRRM = Max, VDRXM = Max,

TC = +100°C, RGK = 1kΩ

IT = 10A (Peak)

RGK = 1000Ω

VD = 6VDC, RL = 100Ω

VD = 6VDC, RL = 100Ω

IG x 3GT

For SCR Protection

Critical Rate of Applied

Forward Voltage

dv/dt RGK = 1kΩ, TC = +100°C

(critical)

Min Typ Max Unit

– – 0.75 mA

– – 0.75 mA

– – 2.2 V

– – 5 mA

– – 200 µA

– – 0.8 V

– 1.2 – µs

– – 2.6 A2sec

– 5 – V/µs

.250

(6.35)

Max

.500

(12.7)

Min

.352 (8.95) Dia Max

.325 (8.13) Dia Max

Cathode

45°

.019 (0.5)

Gate

Anode

.031 (.793)

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