NTE350F View Datasheet(PDF) - NTE Electronics
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NTE350F Datasheet PDF : 2 Pages
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NTE350F
Silicon NPN Transistor
RF Power AMP
Description:
The NTE350F is designed for 12.5 Volt large−signal amplifier applications required in commercial and
industrial equipment operating to 300MHz.
Features:
D Specified 12.5 Volt, 175MHz Characteristics:
Output Power = 15 Watts
Minimum Gain = 6.3dB
Efficiency = 60%
D Characterized with Series Equivalent Large−Signal Impedance Parameters
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Device Dissipation, PD
TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177W/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Note 1. Device is designed for RF operation. The total dissipation rating applies only when the
devices are operated as RF amplifiers.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
ICBO
IC = 20mA, IB = 0
IC = 10mA, VBE = 0
IE = 2.0mA, IC = 0
VCE = 15V, VBE = 0, TC = +55°C
VCB = 15V, IE = 0
18 − − V
36 − − V
4.0 − − V
− − 8.0 mA
− − 0.5 mA
DC Current Gain
Dynamic Characteristics
hFE IC = 0.5A, VCE = 5.0V
5.0 − −
Output Capacitance
Functional Test
Cob VCB = 15V, IE = 0, f = 0.1MHz
− 70 85 pF
Common−Emitter Amplifier Gain
Collector Efficiency
GPE POUT = 15W, VCC = 12.5V, f = 175MHz 6.3 − − dB
η
POUT = 15W, VCC = 12.5V, f = 175MHz 60 − − %
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