NTE2646 View Datasheet(PDF) - NTE Electronics
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NTE2646
Silicon NPN Transistor
General Purpose Amplifier, Switch
Surface Mount
Features:
D Low Current
D Low Voltage
Applications:
D General Purpose Switching and Amplification
Absolute Maximum Ratings:
Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
DC Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Ambient (In free air, Note 1), RthJA . . . . . . . . . . . . . . . . . 625K/W
Note 1. Transistor mounted on a FR4 printed−circuit board.
Electrical Characteristics: (TA = +25 unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector−Base Cut−Off Current
Emitter−Base Cut−Off Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TJ = +150°C
VEB = 5V, IC = 0
IC = 10µA, VCE = 5V
IC = 2mA, VCE = 5V
IC = 10mA, IB = 0.5mA
IC = 10mA, IB = 5mA, Note 2
IC = 10mA, IB = 0.5mA
IC = 10mA, IB = 5mA, Note 2
Note 2. Pulse Test: tp ≤ 300µs, δ ≤ 0.02.
Min Typ Max Unit
−
− 15 nA
−
−
5 µA
−
− 100 nA
− 150 −
200 290 450
− 90 250 mV
− 200 600 mV
− 700 − mV
− 900 − mV
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