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4805NG データシートの表示(PDF) - ON Semiconductor

部品番号コンポーネント説明メーカー
4805NG Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK ON-Semiconductor
ON Semiconductor ON-Semiconductor
4805NG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NTD4805N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 125°C
tRR
ta
VGS = 0 V, dIs/dt = 100 A/ms,
tb
IS = 30 A
0.87
1.2
V
0.76
25.7
ns
13.1
12.6
Reverse Recovery Time
PACKAGE PARASITIC VALUES
QRR
18
nC
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
LS
LD
LD
TA = 25°C
LG
RG
2.49
nH
0.0164
1.88
3.46
0.8
Ω
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