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NLAS2066USG View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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NLAS2066USG Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NLAS2066
DEVICE JUNCTION TEMPERATURE VS. TIME TO
0.1% BOND FAILURES
Junction
Temperature 5C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 1. Failure Rate vs. Time Junction Temperature
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Max Limit
Symbol
VIH
Parameter
Minimum High−
Level Input Voltage,
Enable Inputs
Condition
VIL
Maximum Low−
Level Input Voltage,
Enable Inputs
IIN
Maximum Input
VIN = 5.5 V or GND
Leakage Current,
Enable Inputs
VCC
2.3 $ 10%
2.7 $ 10%
3.0 $ 10%
5.0 $ 10%
2.3 $ 10%
2.7 $ 10%
3.0 $ 10%
5.0 $ 10%
0 V to 5.5 V
255C
VCC x 0.55
VCC x 0.55
VCC x 0.55
VCC x 0.55
VCC x 0.30
VCC x 0.30
VCC x 0.30
VCC x 0.30
+0.1
−40 to 855C
VCC x 0.55
VCC x 0.55
VCC x 0.55
VCC x 0.55
VCC x 0.30
VCC x 0.30
VCC x 0.30
VCC x 0.30
+1.0
−55 to <1255C
VCC x 0.55
VCC x 0.55
VCC x 0.55
VCC x 0.55
VCC x 0.30
VCC x 0.30
VCC x 0.30
VCC x 0.30
+1.0
Unit
V
V
mA
ICC
Maximum Quies-
Enable and VIS = VCC
5.5
1.0
1.0
2.0
mA
cent Supply Current or GND
(per package)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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