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NE5520279A-T1A View Datasheet(PDF) - NEC => Renesas Technology

Part NameDescriptionManufacturer
NE5520279A-T1A 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET NEC
NEC => Renesas Technology NEC
NE5520279A-T1A Datasheet PDF : 3 Pages
1 2 3
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT,
and POWER ADDED EFFICIENCY vs.
INPUT POWER
35
2000
VDS = 3.5 V
30 IDQ = 100 mA
POUT
freq = 850 MHz
1500
25
1000
IDS
20
500 100
ηadd
15
250 50
10
0
0
5
10
15
20
25
Input Power, PIN (dBm)
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0
1.7
Drain
Gate
Source
0.5
Through hole φ 0.2 × 33
0.5
6.1
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
NE5520279A
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Internet: http://WWW.CEL.COM
09/19/2001
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