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NE5520279A View Datasheet(PDF) - NEC => Renesas Technology

Part NameDescriptionManufacturer
NE5520279A 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET NEC
NEC => Renesas Technology NEC
NE5520279A Datasheet PDF : 3 Pages
1 2 3
NE5520279A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain Supply Voltage
V
8.5
VGS
Gate Supply Voltage
V
5
ID
Drain Current
A
1.0
ID
Drain Current (Pulse Test)2
A
1.5
PT
Total Power Dissipation
W
10
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C -55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1 ms.
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS TYP
VDS
Drain to Source Voltage V
3.0
VGS
Gate Supply Voltage
V
2.0
IDS
Drain Current1
A
0.8
PIN
Input Power
dBm 25
MAX
8.0
3.0
1.0
26
Note:
1. Pulse Test
ORDERING INFORMATION
PART NUMBER
NE5520279A-T1A
QTY
5 K/Reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
20
15
10
RTH = 10 °C/W
5
0
0
25 °C 50
100
150
Case Temperature, TC (°C)
1.00
0.8
0.6
0.4
0.2
0
0
DRAIN CURRENT vs.
DRAIN VOLTAGE
2
4
6
Drain Voltage, VD (V)
VGS = 3.75 V
3.55
3.35
3.15
2.95
2.75
2.55
2.35
2.15
1.95
1.75
8
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
2.00
1.00
1.6
1.2
0.8
0.4
0
1.00
1.4
1.8
2.2
Gate Voltage, VG (V)
0.00
2.50
OUTPUT POWER, DRAIN CURRENT,
and POWER ADDED EFFICIENCY vs.
INPUT POWER
35
2500
PO = 32 dBm
30 VDS = 3.5 V
IDQ = 400 mA
freq. = 1.8 GHz
POUT
2000
25
1500
20
1000 100
IDS
15
500 50
10
5
0
10
15
20
25
30
Input Power, PIN (dBm)
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