NDS9948 View Datasheet(PDF) - Fairchild Semiconductor
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Typical Characteristics
10
VGS = -10V
-6.0V
8
6
-4.5V
-4.0V
-3.5V
4
-3.0V
2
0
0
1
2
3
4
5
6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
ID = -2.3A
VGS = -10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
6
VDS = -5V
5
4
TA = -55oC
25oC
125oC
3
2
1
0
1
1.5
2
2.5
3
3.5
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
VGS=-3.5V
1.4
-4.0V
-4.5V
1.2
-6.0V
-10V
1
0.8
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.5
ID = -1A
0.45
0.4
0.35
TA = 125oC
0.3
0.25
0.2
0.15
TA = 25oC
0.1
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS =0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9948 Rev B1(W)
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