NB3N5573DTG View Datasheet(PDF) - ON Semiconductor
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NB3N5573DTG Datasheet PDF : 7 Pages
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NB3N5573
Table 3. ATTRIBUTES
Characteristic
ESD Protection
Human Body Model
Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1)
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 2 kV
Level 1
UL 94 V-0 @ 0.125 in
7623
Table 4. MAXIMUM RATINGS (Note 2)
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VDD
Positive Power Supply
VI
Input Voltage (VIN)
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (Junction-to-Ambient)
GND = 0 V
GND = 0 V
0 lfpm
500 lfpm
GND v VI v VDD
TSSOP–16
TSSOP–16
4.6
-0.5 V to VDD+0.5 V
-40 to +85
-65 to +150
138
108
V
V
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (Junction-to-Case)
(Note 3)
TSSOP-16
33 to 36
°C/W
Tsol
Wave Solder
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board - 2S2P (2 signal, 2 power).
Table 5. DC CHARACTERISTICS (VDD = 3.3 V ±10%, GND = 0 V, TA = -40°C to +85°C, Note 4)
Symbol
Characteristic
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.97
3.3
3.63
V
IDD
IDDOE
VIH
VIL
VOH
VOL
Vcross
DVcross
Power Supply Current
Power Supply Current when OE is Set Low
Input HIGH Voltage (X/CLK, S0, S1, and OE)
Input LOW Voltage (X/CLK, S0, S1, and OE)
Output HIGH Voltage for HCSL Output (See Figure 4)
Output LOW Voltage for HCSL Output (See Figure 4)
Crossing Voltage Magnitude (Absolute) for HCSL Output
Change in Magnitude of Vcross for HCSL Output
120
135
mA
65
mA
2000
GND - 300
VDD + 300 mV
800
mV
660
700
850
mV
-150
0
150
mV
250
550
mV
150
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measurement taken with outputs terminated with RS = 33.2 W, RL = 49.9 W, with test load capacitance of 2 pF and current biasing resistor
set at 475 W. See Figure 3.
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