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NB3N501DR2G View Datasheet(PDF) - ON Semiconductor

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NB3N501DR2G Datasheet PDF : 6 Pages
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NB3N501
Table 4. ATTRIBUTES
Characteristics
ESD Protection
Human Body Model
Machine Model
Charged Device Model
Moisture Sensitivity (Note 1)
SOIC8
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 1 kV
> 150 V
> 1 kV
Level 1
UL 94 V 0 @ 0.125 in
9727
Table 5. MAXIMUM RATINGS
Symbol
Parameter
Condition 1 Condition 2
Rating
Unit
VDD
Positive Power Supply
GND = 0 V
7
V
VIO
Input and Output Voltages
0.5 V v VIO v VDD + 0.5 V
TA
Operating Temperature Range
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
SOIC8
SOIC8
190
°C/W
130
qJC
Thermal Resistance (JunctiontoCase)
(Note 2)
SOIC8
41 to 44
°C/W
Tsol
Wave Solder
PbFree
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
http://onsemi.com
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