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NB6L11DR2 View Datasheet(PDF) - ON Semiconductor

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NB6L11DR2 Datasheet PDF : 12 Pages
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NB6L11
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
VEE
VI
VINPP
Positive Power Supply
Negative Power Supply
Positive Input Voltage
Negative Input Voltage
Differential Input Voltage
Iout
Output Current
VEE = 0 V
VCC = 0 V
VEE = 0 V
VCC = 0 V
|D D| VCC VEE w 2.8 V
VCC VEE t 2.8 V
Continuous
Surge
VI v VCC
VI w VEE
3.6
V
3.6
V
3.6
V
3.6
V
2.8
V
|VCC VEE|
25
mA
50
mA
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (JunctiontoAmbient) 0 lfpm
500 lfpm
SOIC8
SOIC8
40 to +85
65 to +150
190
130
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
qJA
Thermal Resistance (JunctiontoAmbient) 0 lfpm
500 lfpm
SOIC8
TSSOP8
TSSOP8
41 to 44
185
140
°C/W
°C/W
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
TSSOP8
Tsol
Wave Solder
Standard v 3 sec @ 248°C
PbFree v 3 sec @ 260°C
41 to 44
265
265
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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