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NB6L11DR2G View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
NB6L11DR2G 2.5 V/3.3 V Multilevel Input to Differential LVPECL/LVNECL 1:2 Clock or Data Fanout Buffer/Translator ON-Semiconductor
ON Semiconductor ON-Semiconductor
NB6L11DR2G Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NB6L11
Q0 1
8 VCC
Q0 2
Q1 3
R2
7D
R1
R1 6 D
R2
Q1 4
5 VEE
Figure 1. Pinout (Top View) and Logic Diagram
Table 1. PIN DESCRIPTION
Pin Name
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 1
Q0
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 2
Q0
I/O
ECL Output
ECL Output
Default State
Description
Noninverted differential clock/data output 0. Typically termi-
nated with 50 W Resistor to VTT = VCC 2 V.
Inverted differential clock/data output 0. Typically terminated with
50 W resistor to VTT = VCC 2 V.
3
Q1
ECL Output
Noninverted differential clock/data output 1. Typically termi-
nated with 50 W resistor to VTT = VCC 2 V.
4
Q1
ECL Output
Inverted differential clock/data output 1. Typically terminated with
50 W resistor to VTT = VCC 2 V.
5
VEE
Negative power supply voltage
6
D
LVDS, CML, LVPECL, LVNECL,
LVCMOS, LVTTL Input
HIGH
Inverted differential clock/data input. Internal 37.5 kW to VCC and
75 kW to VEE.
7
D
LVDS, CML, LVPECL, LVNECL,
LVCMOS, LVTTL Input
LOW
Noninverted differential clock/data input. Internal 75 kW to VCC
and 37.5 kW to VEE.
8
VCC
Positive power supply voltage
Table 2. ATTRIBUTES
Characteristics
Internal Input Pulldown Resistor
Internal Input Pullup Resistor
ESD Protection
Human Body Model
Machine Model
Charged Device Model
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
SOIC8
TSSOP8
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
37.5 kW
75 kW
> 2 kV
> 100 V
> 1 kV
Pb Pkg
PbFree Pkg
Level 1
Level 1
Level 1
Level 3
UL 94 V0 @ 0.125 in
167 Devices
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