datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

NBB-500 View Datasheet(PDF) - RF Micro Devices

Part NameDescriptionManufacturer
NBB-500 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RFMD
RF Micro Devices RFMD
NBB-500 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
NBB-500
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
MTTF versus Temperature
@ ICC=35mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θJC
Specification
Min.
Typ.
Max.
19.0
20.5
19.5
16.0
18.5
±0.8
1.70:1
1.45:1
1.65:1
4.2
12.3
14.0
3.2
+26.5
-17.0
3.6
3.9
4.2
-0.0015
85
120
>1,000,000
256
Unit
dB
dB
dB
dB
GHz
dBm
dBm
dB
dBm
dB
V
dB/°C
Condition
VD=+3.9V, ICC=35mA, Z0=50, TA=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=0.1GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
f = 2.0 GHz
f = 6.0 GHz
f = 3.0 GHz
f = 2.0 GHz
f=0.1GHz to 10.0GHz
°C
°C
hours
°C/W
J---T-----–----T----C---A---S---E-
VD ICC
=
θJCC Watt)
4-50
Rev A4 030912
Direct download click here
 

Share Link : RFMD
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]