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N0604N View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
N0604N
Renesas
Renesas Electronics Renesas
N0604N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
N0604N
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
12
10
8
6
4
Pulsed
VGS = 10 V
2
ID = 41 A
0
-50
0
50
100
150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
VDD = 30 V
VGS =10 V
RG = 0 Ω
1
0.1
1
td(off)
td(on)
tr
tf
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
1
VGS = 10 V
0V
0.1
0.01
0
Pulsed
0.4
0.8
1.2
1.6
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
Crss
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
10
8
VDD = 12 V
30 V
48 V
6
4
2
0
0
100
ID = 82 A
20
40
60
80
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
1
0.1
VGS = 0 V
di/dt = 100 A/μ s
1
10
100
IF - Diode Forward Current - A
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 5 of 6
 

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