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N0604N View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
N0604N
Renesas
Renesas Electronics Renesas
N0604N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
N0604N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S–D)
trr
Qrr
MIN.
2.0
30
TYP.
5.1
4150
310
165
24
8
64
7
75
21
21
38
39
MAX.
1
±100
4.0
6.5
1.5
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 5 V, ID = 41 A
VGS = 10 V, ID = 41 A
pF
VDS = 25 V,
pF
VGS = 0 V,
pF f = 1 MHz
ns
VDD = 30 V, ID = 41 A,
ns
VGS = 10 V,
ns
RG = 0 Ω
ns
nC
VDD = 48 V,
nC
VGS = 10 V,
nC
ID = 82 A
V
IF = 82 A, VGS = 0 V
ns
IF = 82 A, VGS = 0 V,
nC di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 2 of 6
 

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