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N0601N View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
N0601N
Renesas
Renesas Electronics Renesas
N0601N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
N0601N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
8
6
4
2
0
-50
VGS = 10 V
ID = 50 A
Pulsed
0
50
100
150
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
tf
td(off)
10
tr
1
0.1
1
td(on)
VDD = 30 V
VGS = 10 V
RG = 0
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.4
0.8
1.2
1.6
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1.0 MHz
100
0.01
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
14
12
10
8
6
4
2
0
0
VDD = 12 V
30 V
48 V
ID = 100 A
20 40 60 80 100 120 140
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/µs
1
10
100
IF - Diode Forward Current - A
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
Page 5 of 6
 

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