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N04Q1612C2BT2-85C View Datasheet(PDF) - AMI Semiconductor

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Description
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N04Q1612C2BT2-85C Datasheet PDF : 13 Pages
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AMI Semiconductor, Inc.
N04Q1618C2B
Advance Information
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
oC
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
260oC, 10sec
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range, 0o - 70o C)
Item
Symbol
Device
Conditions
Min.
Typ
Max Unit
Core Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
N04Q1612... 1.2V Core Device 1.1
1.2
1.3
VCC
N04Q1618... 1.8V Core Device
1.65
1.8
V
1.95
N04Q1612... 1.2V Core Device 1.1
VCCQ N04Q1618... 1.8V Core Device
1.65
3.3
V
3.3
VIH
0.8 x
VCCQ
VCC+0.3 V
VIL
–0.3
0.2 x
VCCQ
VOH
IOH = -100uA VCC–0.2
V
VOL
IOL = 100uA
0.2
V
ILI
VIN = 0 to VCC
0.5 µA
ILO
OE = VIH or Chip
Disabled
0.5 µA
Stock No. 23451-D 11/06
4
The specification is ADVANCE INFORMATION and subject to change without notice.
 

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