HYS64V16220GU View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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HYS64V16220GU

3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module

Infineon Technologies 

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

Operating Currents

TA = 0 to 70 °C, VDD = 3.3 V ± 0.3 V 1

Recommended Operating Conditions unless otherwise noted

Parameter & Test Condition

Symb.

Operating Current

ICC1

tRC = tRC(MIN.), tCK = tCK(MIN.)

Outputs open Burst length = 4, CL = 3

All banks operated in random access,

all banks operated in ping-pong manner to maximize

gapless data access

Precharged Standby Current in

Power Down Mode

tCK = min.

ICC2P

CS = VIH(MIN.), CKE ≤ VIL(MAX.)

tCK = infinity

ICC2PS

Precharged Standby Current in

Non-power Down Mode

tCK = min.

ICC2N

CS = VIH(MIN.), CKE ≥ VIH(MIN.)

tCK = infinity

ICC2NS

No operating current

CKE ≥ VIH(MIN.)

ICC3N

tCK = min., CS = VIH(MIN.),

active state (max. 4 banks)

Burst operating current

tCK = min.,

Read command cycling

Auto refresh current

tCK = min.,

Auto Refresh command cycling

Self refresh current

Self Refresh Mode, CKE = 0.2 V

CKE ≤ VIL(MAX.)

ICC3P

–

ICC4

–

ICC5

standard version ICC6

-8/-8B -10

max.

110 75

2

2

1

1

35

30

5

5

45

40

8

8

70

50

130 90

1

1

Unit Note

mA 1

mA 1

mA 1

mA 1

1

mA 1

mA 1

mA

1, 2

mA 1

mA 1

Semiconductor Group

8

1998-08-01

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