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MX28F2000P View Datasheet(PDF) - Macronix International

Part NameDescriptionManufacturer
MX28F2000P 2M-BIT [256K x 8] CMOS FLASH MEMORY MCNIX
Macronix International MCNIX
MX28F2000P Datasheet PDF : 33 Pages
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MX28F2000P
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%, VPP = 12.0V ± 5%
SYMBOL
PARAMETER
MIN.
TYP
MAX.
UNIT
ILI
Input Leakage Current
10
uA
ILO
Output Leakage Current
10
uA
ISB1
Standby VCC current
1
mA
ISB2
1
100
uA
ICC1 (Read)
Operating VCC Current
30
mA
ICC2
50
mA
ICC3 (Program)
50
mA
ICC4 (Erase)
50
mA
ICC5 (Program Verify)
50
mA
ICC6 (Erase Verify)
50
mA
IPP1 (Read)
VPP Current
100
uA
IPP2 (Program)
50
mA
IPP3 (Erase)
50
mA
IPP4 (Program Verify)
50
mA
IPP5 (Erase Verify)
50
mA
VIL
Input Voltage
-0.3 (Note 5)
0.8
V
VIH
2.4
VCC+0.3V V
(Note 6)
VOL
Output Voltage
0.45
V
VOH
2.4
V
CONDITIONS
VIN=GND to VCC
VOUT=GND to VCC
CE=VIH
CE=VCC ± 0.3V
IOUT=0mA, f=1MHz
IOUT=0mA, F=11MHz
In Programming
In Erase
In Program Verify
In Erase Verify
VPP=12.6V
In Programming
In Erase
In Program Verify
In Erase Verify
IOL=2.1mA
IOH=-400uA
NOTES:
1. VCC must be applied before VPP and removed after VPP.
2. VPP must not exceed 14V including overshoot.
3. An influence may be had upon device reliability if the device
is installed or removed while VPP=12V.
4. Do not alter VPP either VIL to 12V or 12V to VIL when
CE=VIL.
5. VIL min. = -0.6V for pulse width < 20ns.
6. If VIH is over the specified maximum value, programming
operation cannot be guranteed.
7. All currents are in RMS unless otherwise noted.(Sampled, not
100% tested.)
P/N: PM0380
REV. 1.5, OCT 29, 1998
13
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