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MUR415RLG View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
MUR415RLG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MUR415RLG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460
MAXIMUM RATINGS
MUR
Rating
Symbol 405 410 415 420 440 460 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
50 100 150 200 400 600
V
VRWM
VR
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 2)
IF(AV)
4.0 @ TA = 80°C
4.0 @
A
TA = 40°C
Nonrepetitive Peak Surge Current
IFSM
125
110
A
(Surge applied at rated load conditions, half wave, single phase, 60 Hz)
Operating Junction Temperature & Storage Temperature
TJ, Tstg
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, Junction−to−Ambient
Symbol
RqJA
MUR
405 410 415 420 440 460
See Note 2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 150°C)
(iF = 3.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 150°C)
(Rated dc Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
Maximum Forward Recovery Time
(IF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
Controlled Avalanche Energy (Maximum)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
MUR
Symbol 405 410 415 420 440 460 Unit
vF
V
0.71
1.05
0.88
1.25
0.89
1.28
iR
mA
150
250
5
10
trr
ns
35
75
25
50
tfr
25
50
ns
Waval
5
mJ
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