3N100E View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

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3N100E

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

Motorola => Freescale 

MTP3N100E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 1000 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 3.0 Adc)

(ID = 1.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 400 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

Reverse Recovery Time

(See Figure 14)

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

trr

ta

tb

QRR

LD

LS

Min

1000

—

—

—

—

2.0

—

—

—

—

2.0

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

1.23

—

—

—

3.0

6.0

2.96

4.97

—

3.56

1316

117

26

13

19

42

33

32.5

6.0

14.6

13.5

0.794

0.63

615

104

511

2.92

3.5

4.5

7.5

Max

Unit

—

Vdc

—

mV/°C

µAdc

10

100

100

nAdc

4.0

Vdc

—

mV/°C

4.0

Ohm

Vdc

12

10

—

mhos

1800

pF

260

75

25

ns

40

90

55

45

nC

—

—

—

Vdc

1.1

—

—

ns

—

—

—

µC

nH

—

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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