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MTB06N03Q8 View Datasheet(PDF) - Cystech Electonics Corp.

Part Name
Description
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MTB06N03Q8
CYSTEKEC
Cystech Electonics Corp. CYSTEKEC
MTB06N03Q8 Datasheet PDF : 6 Pages
1 2 3 4 5 6
CYStech Electronics Corp.
Spec. No. : C710Q8
Issued Date : 2009.05.07
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
30
V
±20
18
12
A
72 *1
20
20
mJ
10 *2
3
W
1.5
-55~+175
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
ID(ON) *1
12
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
1.5
25
-
-
-
-
6
9.2
4753
495
348
-
3.0
-
±100
1
25
-
6.8
11.8
-
-
-
V
VGS=0, ID=250μA
V
VDS = VGS, ID=250μA
S
VDS =5V, ID=18A
nA
VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
A
VDS =10V, VGS =10V
mΩ VGS =10V, ID=18A
mΩ VGS =4.5V, ID=12A
pF
VGS=0V, VDS=15V, f=1MHz
MTB06N03Q8
CYStek Product Specification
 

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