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MSD602-RT1G View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount ON-Semiconductor
ON Semiconductor ON-Semiconductor
MSD602-RT1G Datasheet PDF : 5 Pages
1 2 3 4 5
1000
MSD602−RT1G
TYPICAL CHARACTERISTICS
VCE = 1 V
TA = 25°C
10000
1000
1s
100 ms
10 ms
100 ms
1 ms
10 ms
1 ms
100
100
10
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
1000
Duty Cycle = 50%
100 20%
10%
5%
2%
10 1%
1 Single Pulse Test at TA = 25°C
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 9. Thermal Response
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