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MSD602-RT1G View Datasheet(PDF) - ON Semiconductor

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MSD602-RT1G Datasheet PDF : 0 Pages
MSD602−RT1G
TYPICAL CHARACTERISTICS
1
IC/IB = 10
TA = 150°C
0.1
TA = 25°C
TA = −55°C
0.01
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 IC/IB = 10
1
0.9
TA = −30°C
0.8 TA = −55°C
TA = 25°C
0.7
0.6
0.5
0.4
0.3
0.2 TA = 150°C
0.1
1
TA = 80°C
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
1000
100
TA = 150°C
TA = 25°C
TA = −55°C
VCE = 1 V
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
TA = 25°C
10 mA 100 mA
300 mA IC = 500 mA
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
1.0
0.9
0.8 TA = −55°C
TA = −30°C
100
Cibo
0.7 TA = 25°C
0.6
TA = 80°C
0.5
10 Cobo
0.4 TA = 150°C
0.3
0.2
VCE = 5 V
1
1
10
100
1000
0.1
IC, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
1
10
100
VR, REVERSE VOLTAGE (V)
Figure 6. Capacitance
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