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MSD602-RT1G View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount ON-Semiconductor
ON Semiconductor ON-Semiconductor
MSD602-RT1G Datasheet PDF : 5 Pages
1 2 3 4 5
MSD602−RT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
V
50
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
V
60
Emitter−Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
V
7.0
Collector−Base Cutoff Current
(VCB = 20 V, IE = 0)
ICBO
mA
0.1
DC Current Gain (Note 1)
(VCE = 10 V, IC = 150 mA)
(VCE = 10 V, IC = 500 mA)
hFE1
120
240
hFE2
40
Collector−Emitter Saturation Voltage
(IC = 300 mA, IB = 30 mA)
VCE(sat)
V
0.6
Base−Emitter On Voltage
(IC = 300 mA, VCE = 5 V)
VBE(on)
V
1.0
Base−Emitter Saturation Voltage
(IC = 300 mA, IB = 30 mA)
VBE(sat)
V
1.0
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
pF
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
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