MSD602-RT1G View Datasheet(PDF) - ON Semiconductor
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| MSD602-RT1G Datasheet PDF : 0 Pages | |||
MSD602-RT1G
NPN General Purpose
Amplifier Transistor
Surface Mount
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Collector−Emitter Voltage
V(BR)CEO
50
Emitter−Base Voltage
V(BR)EBO
7.0
Collector Current − Continuous
IC
500
Collector Current − Peak
IC(P)
1.0
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
Adc
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 ~ +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
SC−59
CASE 318D
STYLE 1
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
WR M G
G
WR
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MSD−602RT1G SC−59 3,000 / Tape & Reel
(Pb−Free)
SMSD−602RT1G SC−59 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 10
Publication Order Number:
MSD602−RT1/D
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