MRF234 View Datasheet(PDF) - Advanced Semiconductor
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MRF234 Datasheet PDF : 1 Pages
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MRF234
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF234 is Designed for
Large-Signal Amplifier Applications to
100 MHz.
FEATURES:
• Common Emitter
• Omnigold™ Metalization System
• PG = 9.5 dB min. at 25 W/ 90 MHz
MAXIMUM RATINGS
IC
4.0 A
VCE
18 V
VCB
36 V
PDISS
70 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.5 °C/W
PACKAGE STYLE .380" 4L STUD
.112x45°
B
E
A
C
E
ØC
B
D
#8-32 UNC-2A
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
M A X IM U M
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCES
IC = 200 mA
BVCEO
IC = 200 mA
BVEBO
IE = 5.0 mA
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
18
4.0
1.0
5.0
UNITS
V
V
V
mA
---
Cob
VCB = 12.5 V
f = 1.0 MHz
100
120
pF
GPE
η
VCC = 12.5 V
Pout = 25 W
f = 90 MHz
9.5
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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