MP4013 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
MP4013 Datasheet PDF : 5 Pages
| |||
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors 4 in One)
MP4013
MP4013
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Industrial Applications
Unit: mm
• Small package by full molding (SIP 10 pins)
• High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
• High collector current: IC (DC) = 2 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Zener diode included between collector and base.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Continuous base current
Collector power dissipation
(1-device operation)
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
80 ± 10
V
80 ± 10
V
8
V
2
A
3
0.5
A
2.0
W
4.0
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
3
5
7
9
4
6
8
2
1
R1 R2
R1 ≈ 5 kΩ R2 ≈ 300 Ω
10
1
2006-10-27
|
|
Share Link: 