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MOC3081MS Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
MOC3081MS 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK) Fairchild
Fairchild Semiconductor Fairchild
MOC3081MS Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(800 VOLT PEAK)
MOC3081M
MOC3082M
MOC3083M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
Test Conditions
Symbol Min
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
IF = 30 mA
VF
VR = 6 V
IR
Peak Blocking Current, Either Direction VDRM = 800V, IF = 0 (note 1) IDRM1
Critical Rate of Rise of Off-State Voltage
IF = 0 (figure 9, note 3)
dv/dt
600
Typ*
1.3
0.005
10
1500
Max Units
1.5
V
100
µA
500
nA
V/µs
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions Symbol Device
Min
LED Trigger Current
MOC3081M
Main Terminal
Voltage = 3V (note 2)
IFT
MOC3082M
MOC3083M
Peak On-State Voltage,
Either Direction
ITM = 100 mA peak,
IF = rated IFT
VTM
All
Holding Current, Either Direction
IH
All
Typ*
1.8
500
Max Units
15
10
mA
5
3
V
µA
ZERO CROSSING CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions Symbol Device
Min
Typ*
Inhibit Voltage (MT1-MT2 voltage
above which device will not trigger)
IF = Rated IFT
VINH
All
12
Leakage in Inhibited State
IF = Rated IFT,
VDRM = 800V, off state
IDRM2
All
200
Max Units
20
V
500
µA
ISOLATION CHARACTERISTICS
Characteristics
Input-Output Isolation Voltage
Test Conditions
f = 60 Hz, t = 1 sec (note 4)
Symbol
VISO
Min
7500
Typ*
Max
Units
Vac(pk)
*Typical values at TA = 25°C
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies
between max IFT (15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute max IF (60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
4. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common,
and Pins 4, 5 and 6 are common.
© 2003 Fairchild Semiconductor Corporation
Page 3 of 11
4/14/03
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