datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

CBT6800PWDH View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
CBT6800PWDH Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
10-bit bus switch with precharged outputs
for live insertion
Product specification
CBT6800
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Tamb = –40°C to +85°C UNIT
Min Typ1 Max
VIK Input clamp voltage
VCC = 4.5 V; II = –18 mA
–1.2 V
II
Input leakage current – OE
VCC = 5.5 V; VI = GND or 5.5 V
±5
µA
IO
Output bias current
VCC = 4.5 V; BiasV = 2.4 V; VO = 0
0.25
mA
ICC Quiescent supply current
VCC = 5.5 V; IO = 0, VI = VCC or GND
50
µA
ICC Control pins2
VCC = 5.5 V, one input at 3.4 V, other inputs at VCC or GND
2.5 mA
CI
Control pins
VI= 3 V or 0
3.5
pF
CO(OFF) Off-state capacitance – I/O pins VO = 3 V or 0; switch off
8.2
pF
VCC = 4.5 V; VI = 0 V; II = 64 mA
5
7
ron3 On-resistance
VCC = 4.5 V; VI = 0 V; II = 30 mA
5
7
VCC = 4.5 V; VI = 2.4 V; II = 15 mA
10
15
VP Pass gate voltage
VIN = VCC = 5.0 V, IOUT = –100 µA
3.4
3.6
3.9
V
NOTES:
1. All typical values are at VCC = 5 V, Tamb = 25°C
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. On–state resistance is
determined by the lowest voltage of the two (A or B) terminals.
1999 Oct 28
4
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]