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MMSF3305 View Datasheet(PDF) - Motorola => Freescale

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MMSF3305 Datasheet PDF : 4 Pages
1 2 3 4
MMSF3305
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(1) (3)
V(BR)DSS
30
IDSS
IGSS
Vdc
mV/°C
µAdc
1.0
5.0
100
nAdc
(1) (3)
VGS(th)
Vdc
0.7
1.4
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 9.1 Adc)
(VGS = 4.5 Vdc, ID = 7.3 Adc)
(1) (3)
RDS(on)
On–State Drain Current
(VDS 5.0 V, VGS = 10 V)
(VDS 5.0 V, VGS = 4.5 V)
ID(on)
40
10
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
(1)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 30 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 ) (1)
td(on)
tr
td(off)
tf
Gate Charge
See Figure 8
(VDS = 15 Vdc, ID = 4.6 Adc,
VGS = 10 Vdc) (1)
QT
Q1
Q2
Q3
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
m
20
30
A
Mhos
TBD
pF
TBD
TBD
TBD
ns
TBD
TBD
TBD
TBD
nC
Vdc
1.2
Reverse Recovery Time
See Figure 15
(IS = 2.1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
trr
TBD
ns
ta
tb
Reverse Recovery Stored Charge
QRR
µC
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = 3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Motorola TMOS Power MOSFET Transistor Device Data
3
 

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