MMBZ15VDLT1 View Datasheet(PDF) - ON Semiconductor
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MMBZ15VDLT1 Datasheet PDF : 6 Pages
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MMBZ15VDLT1, MMBZ27VCLT1
TYPICAL CHARACTERISTICS
MMBZ15VDLT1
17
BIDIRECTIONAL
16
MMBZ27VCLT1
29
BIDIRECTIONAL
28
15
27
14
UNIDIRECTIONAL
13
−40
+25
+85
+125
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
26
25
−55
+25
+85
+125
TEMPERATURE (°C)
Figure 2. Typical Breakdown Voltage
versus Temperature
10000
100
10
1
0.1
0.01
−40
+25
+85
+125
TEMPERATURE (°C)
Figure 3. Typical Leakage Current
versus Temperature
300
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0
25
50
75
100 125 150 175
TEMPERATURE (°C)
Figure 4. Steady State Power Derating Curve
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100
PEAK VALUE Ċ IPP
50% OF IPP.
HALF VALUE Ċ
IPP
2
50
tP
0
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0
25 50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
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