MMBTH10LT1 View Datasheet(PDF) - ON Semiconductor
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MMBTH10LT1, MMBTH10−4LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)CEO
25
−
V(BR)CBO
30
−
V(BR)EBO
3.0
−
−
Vdc
−
Vdc
−
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
ICBO
−
IEBO
−
−
100
nAdc
−
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
hFE
−
MMBTH10LT1
60
−
−
MMBTH10−4LT1
120
−
240
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
Base−Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VCE(sat)
−
VBE
−
−
0.5
Vdc
−
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
fT
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
MMBTH10LT1
MMBTH10−4LT1
650
−
800
−
MHz
−
−
Collector−Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common−Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
Ccb
−
Crb
−
rb′Cc
−
−
0.7
pF
−
0.65
pF
−
9.0
ps
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