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MMBT3906W View Datasheet(PDF) - TY Semiconductor

Part Name
Description
MFG CO.
MMBT3906W
Twtysemi
TY Semiconductor Twtysemi
MMBT3906W Datasheet PDF : 2 Pages
1 2
Product specification
MMBT3906W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Base cutoff current
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product
Output capacitance
Input capacitance
Input impedance
Voltage feedback ratio
Small-signal current gain
Output admittance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
Testconditons
Min Typ Max Unit
V(BR)CEO IC = -1.0 mA, IB = 0
-40
V
V(BR)CBO IC = -10 ìA, IE = 0
-40
V
V(BR)EBO IE = -10 ìA, IC = 0
-5
V
IBL VCE = -30 V, VEB = -3.0 V
-50 nA
ICEX VCE = -30 V, VEB = -3.0 V
-50 nA
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
HFE IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V
60
80
100
300
60
30
IC = -10 mA, IB = -1.0 mA
VCE(sat)
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
VBE(sat)
IC = -50 mA, IB = -5.0 mA
-0.65
-0.25
-0.4
V
-0.85
-0.95
fT
IC = -10 mA, VCE = -20 V, f = 100 MHz 250
MHz
Cobo VCB = -5.0 V, IE = 0, f = 1.0 MHz
4.5 pF
Cibo VEB = -0.5 V, IC = 0, f = 1.0 MHz
10 pF
hie VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
2.0
hre VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
0.1
hfe VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 100
12 kÙ
10 X10-4
400
hoe VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
3.0
NF
VCE = -5.0 V, IC = -100 ìA, RS = 1.0 kÙ,
f = 1.0 kHz
td
VCC = -3.0 V, VBE = 0.5 V
60 ìmhos
4.0 dB
35 ns
tr
IC = -10 mA, IB1 = -1.0 mA
35 ns
ts
VCC = -3.0 V, IC = -10 mA
225 ns
tf
IB1 = IB2 = -1.0 mA
75 ns
* Pulse test: pulse width 300 ìs, duty cycle 2.0%.
Marking
Marking
2A
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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