MMBT3906W View Datasheet(PDF) - Weitron Technology

Part Name

Description

View to exact match

MMBT3906W

General Purpose Transistor PNP Silicon

Weitron Technology 

General Purpose Transistor

PNP Silicon

M aximum R atings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current-Continuous

Thermal Characteristics

Characteristics

Total Device Dissipation

TA=25 C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

Symbol

VCEO

VCBO

VEBO

IC

MMBT3906W

COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT-323(SC-70)

Value

-40

-40

-5.0

-200

Unit

Vdc

Vdc

Vdc

mAdc

Symbol

PD

R qJA

TJ,Tstg

Max

150

833

-55 to +150

Unit

mW

C/W

C

Device Marking

MMBT3906W=2A

Electrical Characteristics (TA=25 C Unless Otherwise noted)

Characteristics

Symbol

Min

Max

Unit

Off Characteristics

Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0)

Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0)

Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)

Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)

1. Device mounted FR4 glass epoxy printed circuit board

suing the minimun recommended footprint.

2. Pulse Test:Pulse Width <= 300 µS, Duty Cycle <= 2.0%.

V(BR)CEO

-40

-

Vdc

V(BR)CBO

-40

-

Vdc

V(BR)EBO

-5.0

-

Vdc

IBL

-

-50

nAdc

ICEX

-

-50

nAdc

WEITRON

http://www.weitron.com.tw

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