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FGB20N6S2 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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FGB20N6S2 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Performance Curves (Continued)
14
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
12
10
8
6
125oC
4
25oC
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VEC , FORWARD VOLTAGE (V)
Figure 19. Diode Forward Current vs Forward
Voltage Drop
250
dIEC/dt = 200A/µs, VCE = 390V
200
125oC tb, trr
150
100
25oC tb, trr
50
125oC ta
0
25o ta
0
2
4
6
8
10
12
14
IEC, FORWARD CURRENT (A)
Figure 20. Recovery Times vs Forward Current
160
IEC = 7A, VCE = 390V
140
120
100
125oC tb
80
25oC tb
60
40
125oC ta
20
25oC ta
0
200 300 400 500 600 700 800 900
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
Figure 21. Recovery Times vs Rate of Change of
Current
500
VCE = 390V
450
400
125oC, IEC = 7A
350
300
125oC, IEC = 3.5A
250
25oC, IEC = 7A
200
150
25oC, IEC = 3.5A
100
200
300 400 500 600 700 800 900
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
Figure 22. Stored Charge vs Rate of Change of
Current
6.0
VCE = 390V, TJ = 125°C
5.5
5.0
IEC = 7A
4.5
IEC = 3.5A
4.0
3.5
3.0
200
300 400 500 600 700 800 900
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
10
VCE = 390V, TJ = 125°C
9
8
IEC = 7A
7
6
IEC = 3.5A
5
4
3
200
300 400 500 600 700 800 900
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
 

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