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FGB20N6S2 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FGB20N6S2 600V, SMPS II Series N-Channel Anti-Parallel Stealth Fairchild
Fairchild Semiconductor Fairchild
FGB20N6S2 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information
Device Marking
20N6S2D
20N6S2D
20N6S2D
20N6S2D
Device
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off State Characteristics
BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0
600
ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C
-
TJ = 125°C -
IGES Gate to Emitter Leakage Current
VGE = ± 20V
-
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 7.0A,
TJ = 25°C
-
VGE = 15V
TJ = 125°C
-
VEC
Diode Forward Voltage
IEC = 7.0A
-
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH)
VGEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 7.0A,
VGE = 15V
-
VCE = 300V VGE = 20V
-
IC = 250µA, VCE = 600V
3.5
IC = 7.0A, VCE = 300V
-
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
trr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
Thermal Characteristics
TJ = 150°C, RG = 25Ω, VGE = 35
15V, L = 0.5mH VCE = 600V
IGBT and Diode at TJ = 25°C, -
ICE = 7A,
-
VCE = 390V,
-
VGE = 15V,
RG = 25
-
L = 0.5mH
-
Test Circuit - Figure 26
-
-
IGBT and Diode at TJ = 125°C -
ICE = 7A,
-
VCE = 390V,
-
VGE = 15V,
RG = 25
-
L = 0.5mH
-
Test Circuit - Figure 26
-
-
IEC = 7A, dIEC/dt = 200A/µs
-
IEC = 1A, dIEC/dt = 200A/µs
-
RθJC Thermal Resistance Junction-Case
IGBT
-
Diode
Typ
-
-
-
-
2.2
1.9
1.9
30
38
4.3
6.5
-
7.7
4.5
87
50
25
85
58
7
4.5
120
85
20
125
135
26
20
-
Quantity
30
50
50
800 units
Max Units
-
V
250
µA
2.0
mA
±250 nA
2.7
V
2.2
V
2.7
V
36
nC
45
nC
5.0
V
8.0
V
-
A
-
ns
-
ns
-
ns
-
ns
-
µJ
-
µJ
75
µJ
-
ns
-
ns
145
ns
105
ns
-
µJ
140
µJ
180
µJ
31
ns
24
ns
1.0 °C/W
2.2 °C/W
NOTE:
1ao.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny6p.foicratlhdeiocdoenvisenuiseendceinotfhtehetecsitrccuirictuditeasnigdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
2tJh.EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl otoowfretchrueDrrienevsnittcaeenqTtauunarenlso-OuzesffrpSoow(wIiCtecErhi=lnogs0sALs)o.tsaAsr.ltliTndhgeivsaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
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