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MMBD2835LT1G-2009 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MMBD2835LT1G(2009) Monolithic Dual Switching Diodes ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBD2835LT1G Datasheet PDF : 4 Pages
1 2 3 4
MMBD2835LT1G, MMBD2836LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 mAdc)
MMBD2835LT1G
V(BR)
35
MMBD2836LT1G
75
Reverse Voltage Leakage Current (Note 3)
(VR = 30 Vdc)
(VR = 50 Vdc)
IR
MMBD2835LT1G
MMBD2836LT1G
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CT
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
VF
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
3. For each individual diode while the second diode is unbiased.
trr
Max
Unit
Vdc
nAdc
100
100
4.0
pF
1.0
Vdc
1.0
1.2
4.0
ns
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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