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MMBD2836LT1G-2009 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MMBD2836LT1G(2009) Monolithic Dual Switching Diodes ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBD2836LT1G Datasheet PDF : 4 Pages
1 2 3 4
MMBD2835LT1G,
MMBD2836LT1G
Monolithic Dual Switching
Diodes
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
MMBD2835LT1G VR
MMBD2836LT1G
35
Vdc
75
Forward Current
THERMAL CHARACTERISTICS
IF
100
mAdc
Total Device Dissipation FR5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4 mW/°C
Thermal Resistance, JunctiontoAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg 55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
3
1
2
SOT23 (TO 236AB)
CASE 318 08
STYLE 12
MARKING DIAGRAM
xxx MG
G
1
xxx = Specific Device Code
A3X = MMBD2835LT1G
A2X = MMBD2836LT1G
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBD2835LT1G SOT23 3000 / Tape & Reel
(PbFree)
MMBD2836LT1G SOT23 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 Rev. 5
Publication Order Number:
MMBD2835LT1/D
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