MLN1033F View Datasheet(PDF) - Advanced Semiconductor
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MLN1033F Datasheet PDF : 1 Pages
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MLN1033F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1033F is Designed for
Class A Linear Applications up to 1.0 GHz.
FEATURES:
• Class A Operation
• PG = 12 dB at 2.0 W/1.0 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
0.5 A
VCBO
40 V
VCES
25 V
VEBO
3.5 V
PDISS
20.6 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
17 °C/W
PACKAGE STYLE .250 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
ORDER CODE: ASI10626
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 2.0 mA
BVCEO
IC = 5.0 mA
BVEBO
IE = 2.0 mA
hFE
VCE = 5.0 V
IC = 400 mA
MINIMUM TYPICAL MAXIMUM
40
25
3.5
15
150
UNITS
V
V
V
---
PG
VCE = 18 V
POUT = 2.0 W
ICQ = 220 mA
f = 1.0 GHz
12
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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