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MJE13003G-P-G-T60-T 데이터 시트보기 (PDF) - Unisonic Technologies

 부품명 상세내역 제조사 MJE13003G-P-G-T60-T NPN SILICON POWER TRANSISTOR Unisonic Technologies
MJE13003G-P-G-T60-T Datasheet PDF : 8 Pages
 1 2 3 4 5 6 7 8
MJE13003-P
 SWITCHING TIMES NOTE
NPN SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be
made on each waveform to determine the total switching time. For this reason, the following new terms have been
defined.
tSV = Voltage Storage Time, 90% IB1 to 10% Vclamp
tRV = Voltage Rise Time, 10 ~ 90% Vclamp
tFI= Current Fall Time, 90 ~ 10% IC
tTI = Current Tail, 10 ~ 2% IC
tC = Crossover Time, 10% Vclamp to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this transistor are the inductive switching speeds (tC and tSV) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
2
10
1
0.7
tR
0.5
Vcc=125V
Ic/IB=5
TJ=25°C
7
5
ts
Vcc=125V
Ic/IB=5
TJ=25°C
3
2
0.3
0.2
tD @ VBE(OFF)=5V
0.1
0.07
0.05
0.03
0.02
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 10
20
1
0.7
0.5
0.3
tF
0.2
0.1
0.02 0.03 0.050.07 0.1
0.2 0.3 0.5 0.7 1
2
Collector Current, IC (A)
Fig.2 Turn-On Time
Collector Current, IC (A)
Fig.3 Turn-Off Time
Fig.4 Thermal Response
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-027.A