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MJE13003G-P-G-TM3-B View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13003G-P-G-TM3-B NPN SILICON POWER TRANSISTOR UTC
Unisonic Technologies UTC
MJE13003G-P-G-TM3-B Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE13003-P
NPN SILICON TRANSISTOR
„ APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+125V
Rc
TUT
RB
SCOPE
D1
-4.0V
Coil Data :
VCC=20V
Ferroxcube core #6656
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
Lcoil=50mH
Output Waveforms
VCC=125V
RC=125
D1=1N5820 or
Equiv.
RC=47
+10.3 V
25μS
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Table 2. Typical Inductive Switching Performance
Ic Tc
tsv tRV
tFI
tTI
tc
(A) (°C) (µs) (µs) (µs) (µs) (µs)
0.5
25
100
1.3
1.6
0.23 0.30 0.35 0.30
0.26 0.30 0.40 0.36
1 25 1.5 0.10 0.14 0.05 0.16
100 1.7 0.13 0.26 0.06 0.29
1.5
25
100
1.8
3
0.07 0.10 0.05 0.16
0.08 0.22 0.08 0.28
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
ICPK
VCLAMP
90% Vclamp 90% Ic
IC
tsv
tRV
tFI
tTI
VCE
IB
90% IB1
tc
10% VCLAMP 10%
ICPK 2% Ic
Time
Fig.1 Inductive Switching Measurements
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R204-027.A
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