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MJE13003G-P-G-T60-T View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13003G-P-G-T60-T NPN SILICON POWER TRANSISTOR UTC
Unisonic Technologies UTC
MJE13003G-P-G-T60-T Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE13003-P
NPN SILICON TRANSISTOR
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
TC=25°C
TC=100°C
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μs, Duty Cycle2%
„ CLASSIFICATION OF hFE1
SYMBOL
TEST CONDITIONS
VCEO(SUS) IC=10 mA , IB=0
ICEO
VCEO=Rated Value,
VBE(OFF)=1.5 V
IEBO VEB=9 V, IC=0
MIN TYP MAX UNIT
400
V
1 mA
5
1 mA
Is/b
RBSOA
hFE1
hFE2
VCE(SAT)
VBE(SAT)
IC=0.4A, VCE=5V
IC=1A, VCE=5V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.2A, IB=0.4A
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1A, IB=0.25A, TC=100°C
fT IC=100mA, VCE=10V, f=1MHz
COB VCB=10V, IE=0, f=0.1MHz
See Fig.5
See Fig.6
14
57
5
30
0.5
1V
3
1
1
1.2 V
1.1
4 10
21
MHz
pF
tD
tR VCC=125V, IC=1A, IB1=IB2=0.2A,
tS tP=25μs, Duty Cycle1%
tF
tSTG
tC
IC=1A, Vclamp=300V, IB1=0.2A,
VBE(OFF)=5Vdc, TC=100°C
tF
0.05 0.1 μs
0.5 1 μs
2 4 μs
0.4 0.7 μs
1.7 4 μs
0.29 0.75 μs
0.15
μs
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
D
31 ~ 37
E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R204-027.A
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