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MJE13003G-P-E-TM3-B View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13003G-P-E-TM3-B NPN SILICON POWER TRANSISTOR UTC
Unisonic Technologies UTC
MJE13003G-P-E-TM3-B Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE13003-P
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Base Voltage
VCBO
700
V
Emitter Base Voltage
VEBO
9
V
Collector Current
Continuous
IC
1.5
A
Peak (1)
ICM
3
Base Current
Continuous
IB
0.75
A
Peak (1)
IBM
1.5
Emitter Current
Continuous
IE
2.25
A
Peak (1)
IEM
4.5
TO-126 / TO-126C
1.4
W
Total Power Dissipation (TC=25°C)
TO-92 / TO-92L
PD
1.1
W
TO-251/ TO-252
25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R204-027.A
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